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mrf6v2300nr1 MRF6V2300NBR1 1 rf device data freescale semiconductor rf power field effect transistors n - channel enhancement - mode lateral mosfets designed primarily for cw large - signal output and driver applications with frequencies up to 600 mhz. devices are unmatched and are suitable for use in industrial, medical and scientific applications. ? typical cw performance: v dd = 50 volts, i dq = 900 ma, p out = 300 watts, f = 220 mhz power gain ? 25.5 db drain efficiency ? 68% ? capable of handling 10:1 vswr, @ 50 vdc, 220 mhz, 300 watts cw output power features ? integrated esd protection ? excellent thermal stability ? facilitates manual gain control, alc and modulation techniques ? 200 c capable plastic package ? rohs compliant ? in tape and reel. r1 suffix = 500 units per 44 mm, 13 inch reel. table 1. maximum ratings rating symbol value unit drain- source voltage v dss - 0.5, +110 vdc gate - source voltage v gs - 0.5, +10 vdc storage temperature range t stg - 65 to +150 c case operating temperature t c 150 c operating junction temperature t j 200 c document number: mrf6v2300n rev. 3, 1/2008 freescale semiconductor technical data mrf6v2300nr1 MRF6V2300NBR1 case 1484 - 04, style 1 to-272 wb-4 plastic MRF6V2300NBR1 case 1486 - 03, style 1 to - 270 wb - 4 plastic mrf6v2300nr1 10 - 600 mhz, 300 w, 50 v lateral n - channel single - ended broadband rf power mosfets parts are single - ended (top view) rf out /v ds figure 1. pin connections rf out /v ds rf in /v gs rf in /v gs note: exposed backside of the package is the source terminal for the transistor. ? freescale semiconductor, inc., 2007 - 2008. all rights reserved.
2 rf device data freescale semiconductor mrf6v2300nr1 MRF6V2300NBR1 table 2. thermal characteristics characteristic symbol value (1,2) unit thermal resistance, junction to case case temperature 83 c, 300 w cw r jc 0.24 c/w table 3. esd protection characteristics test methodology class human body model (per jesd22 - a114) 2 (minimum) machine model (per eia/jesd22 - a115) a (minimum) charge device model (per jesd22 - c101) iv (minimum) table 4. moisture sensitivity level test methodology rating package peak temperature unit per jesd 22 - a113, ipc/jedec j - std - 020 3 260 c table 5. electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current (v ds = 100 vdc, v gs = 0 vdc) i dss ? ? 2.5 ma zero gate voltage drain leakage current (v ds = 50 vdc, v gs = 0 vdc) i dss ? ? 50 adc drain- source breakdown voltage (i d = 150 ma, v gs = 0 vdc) v (br)dss 110 ? ? vdc gate - source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 10 adc on characteristics gate threshold voltage (v ds = 10 vdc, i d = 800 adc) v gs(th) 1 1.63 3 vdc gate quiescent voltage (v dd = 50 vdc, i d = 900 madc, measured in functional test) v gs(q) 1.5 2.6 3.5 vdc drain- source on - voltage (v gs = 10 vdc, i d = 2 adc) v ds(on) ? 0.28 ? vdc dynamic characteristics reverse transfer capacitance (v ds = 50 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c rss ? 2.88 ? pf output capacitance (v ds = 50 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c oss ? 120 ? pf input capacitance (v ds = 50 vdc, v gs = 0 vdc 30 mv(rms)ac @ 1 mhz) c iss ? 268 ? pf functional tests (in freescale test fixture, 50 ohm system) v dd = 50 vdc, i dq = 900 ma, p out = 300 w, f = 220 mhz, cw power gain g ps 24 25.5 27 db drain efficiency d 66 68 ? % input return loss irl ? -16 -9 db 1. mttf calculator available at http://www.freescale.com/rf . select software & tools/development tools/calculators to access mttf calculators by product. 2. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes - an1955. attention: the mrf6v2300n and mrf6v2300nb are high power devices and special considerations must be followed in board design and mounting. incorrect mounting can lead to internal temperatures which exceed the maximum allowable operating junction temperature. refer to freescale application note an3263 (for bolt down mounting) or an1907 (for solder reflow mounting) prior to starting system design to ensure proper mounting of these devices.
mrf6v2300nr1 MRF6V2300NBR1 3 rf device data freescale semiconductor figure 2. mrf6v2300nr1(nbr1) test circuit schematic z8 0.085 x 0.170 microstrip z9 2.275 x 0.170 microstrip z10 0.945 x 0.170 microstrip z11 0.443 x 0.082 microstrip pcb arlon cuclad 250gx - 0300- 55 - 22, 0.030 , r = 2.55 z1 0.352 x 0.082 microstrip z2 1.567 x 0.082 microstrip z3 0.857 x 0.082 microstrip z4 0.276 x 0.220 microstrip z5 0.434 x 0.220 microstrip z6, z7 0.298 x 0.630 microstrip z1 rf input c12 z2 z3 z4 z5 z6 dut z9 c23 rf output z10 c5 b1 v bias v supply c3 + c4 c2 + r1 c18 c19 c17 c20 + c1 + c7 c6 b2 z7 z11 z8 b3 c22 c21 r2 r3 c9 c8 c11 c10 c13 l1 l2 c14 c15 c16 table 6. mrf6v2300nr1(nbr1) test circuit component designations and values part description part number manufacturer b1, b2 95 , 100 mhz long ferrite beads, surface mount 2743021447 fair- rite b3 47 , 100 mhz short ferrite bead, surface mount 2743019447 fair- rite c1 47 f, 50 v electrolytic capacitor 476kxm063m illinois capacitor c2 22 f, 35 v tantalum capacitor t494x226k035at kemet c3 10 f, 35 v tantalum capacitor t491d106k035at kemet c4, c19 10 k pf chip capacitors atc200b103kt50xt atc c5, c18 20 k pf chip capacitors atc200b203kt50xt atc c6, c11, c17 0.1 f, 50 v chip capacitors cdr33bx104akys avx c7, c8, c15, c16 2.2 f, 50 v chip capacitors c1825c225j5rac kemet c10 220 nf chip capacitor c1206c224z5vac kemet c9, c12, c14, c23 1000 pf chip capacitors atc100b102jt50xt atc c13 82 pf chip capacitor atc100b820jt500xt atc c20 470 f, 63 v electrolytic capacitor 477kxm063m illinois capacitor c21 24 pf chip capacitor atc100b240jt500xt atc c22 39 pf chip capacitor atc100b390jt500xt atc l1 4 turn #18 awg, 0.18? id none none l2 82 nh inductor 1812sms- 82nj coilcraft r1 270 , 1/4 w chip resistor crcw12062700fkta vishay r2, r3 4.75 , 1/4 w chip resistors crcw12064r75fkta vishay
4 rf device data freescale semiconductor mrf6v2300nr1 MRF6V2300NBR1 figure 3. mrf6v2300nr1(nbr1) test circuit component layout mrf6v2300n/nb cut out area c2 + + rev. 3 c3 b1 c7 b2 c4 c5 c6 c8 r1 c9 r2 r3 c12 c13 c22 c21 c23 c14 l1 l2 c17 c18 c19 c15* c16* b3 c20 c10 c11 * stacked c1
mrf6v2300nr1 MRF6V2300NBR1 5 rf device data freescale semiconductor typical characteristics 50 1 1000 020 10 v ds , drain?source voltage (volts) figure 4. capacitance versus drain - source voltage c, capacitance (pf) 30 c iss 1 100 1 t c = 25 c 10 10 v ds , drain?source voltage (volts) figure 5. dc safe operating area i d , drain current (amps) 40 0 10 0 drain voltage (volts) 9 8 7 6 20 120 figure 6. dc drain current versus drain voltage i d , drain current (amps) 60 600 22 28 i dq = 1350 ma 10 26 25 24 p out , output power (watts) cw figure 7. cw power gain versus output power g ps , power gain (db) v dd = 50 vdc f1 = 220 mhz 100 10 40 100 27 5 v gs = 3 v c oss c rss 80 100 4 3 2 1 2.75 v 2.63 v 2.5 v 2.25 v 23 100 1125 ma 900 ma 650 ma 450 ma 100 ?55 ?15 1 p out , output power (watts) pep ?25 ?30 ?35 ?40 10 600 figure 8. third order intermodulation distortion versus output power imd, third order intermodulation distortion (dbc) v dd = 50 vdc, f1 = 220 mhz, f2 = 220.1 mhz two?tone measurements, 100 khz tone spacing ?45 ?50 ?20 i dq = 450 ma 1350 ma 900 ma 650 ma 1125 ma 34 50 60 24 28 26 58 56 54 52 p in , input power (dbm) figure 9. cw output power versus input power p out , output power (dbm) 30 32 p3db = 55.76 dbm (377 w) actual ideal p1db = 55.04 dbm (319 w) v dd = 50 vdc, i dq = 900 ma f = 220 mhz measured with 30 mv(rms)ac @ 1 mhz v gs = 0 vdc
6 rf device data freescale semiconductor mrf6v2300nr1 MRF6V2300NBR1 typical characteristics figure 10. power gain versus output power p out , output power (watts) cw g ps , power gain (db) v dd = 20 v 25 v 400 14 28 0 200 50 18 16 100 150 24 22 26 i dq = 900 ma f = 220 mhz 35 v 40 v 50 v 20 250 300 350 45 v 35 35 60 10 25 c t c = ?30 c 85 c 25 15 50 45 40 p in , input power (dbm) figure 11. power output versus power input p out , output power (dbm) v dd = 50 vdc i dq = 900 ma f = 220 mhz 20 30 55 22 29 5 10 80 10 28 26 24 70 60 50 40 30 20 p out , output power (watts) cw figure 12. power gain and drain efficiency versus cw output power g ps , power gain (db) d, drain efficiency (%) d 27 25 23 100 600 25 c t c = ?30 c 85 c 85 c ?32 ?28 ?29 ?30 ?31 ?33 imd3 (dbc) g ps , power gain (db) 240 160 imd3 g ps f, frequency (mhz) figure 13. vhf broadcast broadband performance 230 220 210 200 190 180 170 25 24 15 65 55 45 40 30 20 d , drain efficiency (%) 22 20 18 16 15 23 21 19 17 60 50 35 25 d v dd = 50 v, p out = 300 w (peak) i dq = 1100 ma, tone?spacing = 100 khz g ps v dd = 50 vdc i dq = 900 ma f = 220 mhz 25 c ?30 c 30 v
mrf6v2300nr1 MRF6V2300NBR1 7 rf device data freescale semiconductor typical characteristics 250 10 8 90 t j , junction temperature ( c) figure 14. mttf versus junction temperature this above graph displays calculated mttf in hours when the device is operated at v dd = 50 vdc, p out = 300 w cw, and d = 68%. mttf calculator available at http:/www.freescale.com/rf. select software & tools/development tools/calculators to access mttf calculators by product. 10 7 10 6 10 5 110 130 150 170 190 mttf (hours) 210 230
8 rf device data freescale semiconductor mrf6v2300nr1 MRF6V2300NBR1 z o = 5 z load z source f = 220 mhz f = 220 mhz v dd = 50 vdc, i dq = 900 ma, p out = 300 w cw f mhz z source z load 220 1.23 + j3.69 2.43 + j2.04 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. figure 15. series equivalent source and load impedance z source z load input matching network device under test output matching network
mrf6v2300nr1 MRF6V2300NBR1 9 rf device data freescale semiconductor package dimensions
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mrf6v2300nr1 MRF6V2300NBR1 11 rf device data freescale semiconductor
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mrf6v2300nr1 MRF6V2300NBR1 15 rf device data freescale semiconductor product documentation refer to the following documents to aid your design process. application notes ? an1907: solder reflow attach method for high power rf devices in plastic packages ? an1955: thermal measurement methodology of rf power amplifiers ? an3263: bolt down mounting method for high power rf transistors and rfics in over - molded plastic packages engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices revision history the following table summarizes revisions to this document. revision date description 0 feb. 2007 ? initial release of data sheet 1 feb. 2007 ? added fig. 1, pin connections, p. 1 ? removed footnote references listed for operating junction temperature, table 1, maximum ratings, p. 1 ? added max value to power gain, table 5, functional tests, p. 2 2 may 2007 ? corrected test circuit component part numbers in table 6, component designations and values for c4, c19, c5, c18, c9, c12, c14, and c23, p. 3 3 jan. 2008 ? increased operating frequency to 600 mhz, p. 1 ? added case operating temperature limit to the maximum ratings table and set limit to 150 c, p. 1 ? corrected c iss test condition to indicate ac stimulus on the v gs connection versus the v ds connection, dynamic characteristics table, p. 2 ? updated pcb information to show more specific material details, fig. 2, test circuit schematic, p. 3 ? replaced case outline 1486 - 03, issue c, with 1486 - 03, issue d, p. 9 - 11. added pin numbers 1 through 4 on sheet 1. ? replaced case outline 1484 - 04, issue d, with 1484 - 04, issue e, p. 12 - 14. added pin numbers 1 through 4 on sheet 1, replacing gate and drain notations with pin 1 and pin 2 designations.
16 rf device data freescale semiconductor mrf6v2300nr1 MRF6V2300NBR1 information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2007 - 2008. all rights reserved. how to reach us: home page: www.freescale.com web support: http://www.freescale.com/support usa/europe or locations not listed: freescale semiconductor, inc. technical information center, el516 2100 east elliot road tempe, arizona 85284 +1 - 800- 521- 6274 or +1 - 480- 768- 2130 www.freescale.com/support europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33 1 69 35 48 48 (french) www.freescale.com/support japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1 - 8 - 1, shimo - meguro, meguro - ku, tokyo 153 - 0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor hong kong ltd. technical information center 2 dai king street tai po industrial estate tai po, n.t., hong kong +800 2666 8080 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center p.o. box 5405 denver, colorado 80217 1 - 800- 441- 2447 or 303 - 675- 2140 fax: 303 - 675- 2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: mrf6v2300n rev. 3, 1/2008

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